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One-Dimensional Nanostructures
One-dimensional (1D) nanostructures, including nanowires, nanotubes and quantum wires, have been regarded as the most promising building blocks for nanoscale electronic and optoelectronic devices. Worldwide efforts in both the theory and the experimental investigation of growth, characterization and applications of 1D nanostructures have resulted in a mature, multidisciplinary field. In this book, a wealth of state-of-the-art information offers the opportunity to uncover the underlying science from diverse perspectives. Leading researchers elucidate the synthesis and properties of 1D nanostructures for various morphologies and compositions (semiconductor, metal, carbon, etc.) as well as their considerable impact on spintronics, information storage, and the design of field-effect transistors.
Nanoscale Transistors : Device Physics, Modeling and Simulation
The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules.
Microwave engineering ; 4th ed.
Includes more material on active circuits, noise, nonlinear effects, and wireless systems. Chapters on noise and nonlinear distortion, and active devices have been added along with the coverage of noise and more material on intermodulation distortion and related nonlinear effects. On active devices, there's more updated material on bipolar junction and field effect transistors. New and updated material on wireless communications systems, including link budget, link margin, digital modulation methods, and bit error rates is also part of the new edition. Other new material includes a section on transients on transmission lines, the theory of power waves, a discussion of higher order modes and frequency effects for microstrip line, and a discussion of how to determine unloaded Q from resonator measurements
Microwave Engineering : Concepts and Fundamentals
Covers everything from wave propagation to reflection and refraction, guided waves, and transmission lines, providing a comprehensive understanding of the underlying principles at the core of microwave engineering. This encyclopedic text not only encompasses nearly all facets of microwave engineering, but also gives all topics—including microwave generation, measurement, and processing—equal emphasis. Packed with illustrations to aid in comprehension. Describes the mathematical theory of waveguides and ferrite devices, devoting an entire chapter to the Smith chart and its applications Discusses different types of microwave components, antennas, tubes, transistors, diodes, and parametric devices Examines various attributes of cavity resonators, semiconductor and RF/microwave devices, and microwave integrated circuits
Microelectronic Circuits
Devices and basic circuits -- Signals, amplifiers and semiconductors -- Operational amplifiers -- Diodes -- Bipolar junction transistors (BJTS) -- Mos field-effect transistors (MOSFETS) -- Transistor amplifiers -- Analog integrated circuits -- Building blocks of integrated-circuit amplifiers -- Differential and multistage amplifiers -- Frequency response -- Feedback -- Output stages and power amplifiers -- Operational-amplifier circuits -- Filters and oscillators -- Digital integrated circuits -- CMOS digital logic circuits -- Digital Design: Power, Speed, and Area -- Memory and Clocking Circuits
Inelastic Light Scattering of Semiconductor Nanostructures : Fundamentals and Recent Advances
Semiconductor nanostructures are a field of enormous and still-growing research interest. On one hand, they are already realized in mass products, e.g., in high-electron-mobility field-effect transistors and quantum-well lasers. On the other hand, they allow, in specially tailored systems, the investigation of fundamental properties, such as many-particle interactions of electrons in reduced dimensions. This book attempts to fill the gap between general semiconductor textbooks and research articles. It provides (i) an introduction into the basic concepts of inelastic light scattering on semiconductor nanostructures and into their fabrication and basic properties, and, (ii) a description of the most striking recent advances in this field. Each chapter is as self-contained as possible.
Graded Ferroelectrics, Transpacitors and Transponents
The primary focus of the book is directed toward polarization-graded ferroelectrics and their active components - transpacitors; however, the findings here are quite general. The theory of graded ferroics is put on a solid foundation in Chapters 2 and 5, whereas much of the introductory material relies more heavily upon analogy. This was done so as to provide the reader with an intuitive approach to graded ferroics. Heterogeneous ferroics are shown as logical extensions of passive semiconductor junction devices such as p-n and n-p diodes and their active manifestations: transistors, to transpacitors, transductors, translastics and ultimately to the general active ferroic elements, transponents.
Gallium Nitride Processing for Electronics, Sensors and Spintronics
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.
Fundamentals of Solid State Engineering
Fundamentals of Solid State Engineering, 2nd Edition, provides a multi-disciplinary introduction to Solid State Engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering. Basic physics concepts are introduced, followed by a thorough treatment of the technology for solid state engineering. Topics include compound semiconductor bulk and epitaxial thin films growth techniques, current semiconductor device processing and nano-fabrication technologies. Examples of semiconductor devices and a description of their theory of operation are then discussed, including transistors, semiconductor lasers and photodetectors.
FinFETs and Other Multi-Gate Transistors
FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.
Direct Transistor-level Layout for Digital Blocks
The essential flaw in prior efforts is an over-reliance on geometric assumptions from large-scale cell-based layout algorithms. Individual transistors may seem simple, but they do not pack as gates do. Algorithms that ignore these shape-level issues suffer the consequences when thousands of devices are poorly packed. The approach described in this book can pack devices much more densely than a typical cell-based layout
Matching Properties of Deep Sub-Micron MOS Transistors
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield.
Low-Frequency Noise in Advanced MOS Devices
Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits.
Advanced Gate Stacks for High-Mobility Semiconductors
Provides a comprehensive monograph on gate stacks in semiconductor technology. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
