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Microscopy of Semiconducting Materials ; Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK
This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.
Elementary physics of complex plasmas
Complex plasmas are dusty plasmas in which the density and electric charges of the dust grains are sufficiently high to induce long-range grain-grain interactions, as well as strong absorption of charged-plasma components. Together with the sources replenishing the plasma such systems form a highly dissipative thermodynamically open system that exhibits many features of collective behaviour generally found in complex systems. Most notably among them are self-organized patterns such as plasma crystals, plasma clusters, dust stars and further spectacular new structures. Beyond their intrinsic scientific interest, the study of complex plasmas grows in importance in a great variety of fields, ranging from space-plasma sciences to applied fields such as plasma processing, thin-film deposition and even the production of computer chips by plasma etching, in which strongly interacting clouds of complex plasmas can cause major contamination of the final product.
