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الصفحة 1
الصفحة 1
Materials Fundamentals of Gate Dielectrics
This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy.
Magnetic Heterostructures : Advances and Perspectives in Spinstructures and Spintransport
Magnetic heterostructures constitute an important field in magnetism and nanotechnology, which has developed over the past fifteen years due to important advances in epitaxial- growth techniques and lithographic processes. Magnetic heterostructures combine different physical properties which do not exist in nature. Examples are semiconductors/ferromagnets, superconductors/ferromagnets, and ferromagnets/antiferromagnets. These combinations display rich and novel physical properties different from those that exit in any single one of them. Interlayer exchange coupling, exchange bias, proximity effects, giant magneto-resistance, tunneling magneto-resistance, spininjection and spintransport are examples of new physical phenomena that rely on the combination of different materials layers
Local-Moment Ferromagnets : Unique Properties for Modern Applications
Some ferromagnetic materials with localized magnetic moments have become a hot topic in modern solid-state physics because of their potential applications, e.g. in spintronic devices. The magnetic systems of interest comprise diluted magnetic semiconductors and half-metallic ferromagnets. Like conventional concentrated local-moment systems, they are characterized by an exchange interaction between localized magnetic moments and quasi-free charge carriers. The current research on local-moment ferromagnetism is reviewed in a tutorial style by leading experts in this field. Experimentalists present the latest approaches to characterize the unique material properties, and theoreticians propose definitive ideas to explain the observed phenomena. Students and researches alike will benefit from this status report.
Lifetime Spectroscopy : A Method of Defect Characterization in Silicon for Photovoltaic Applications
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Complex Inorganic Solids : Structural, Stability, and Magnetic Properties of Alloys
One the key aspects of this volume is to cut across the traditional taxonomy of disciplines in the study of alloys. Hence there has been a deliberate attempt to integrate the different approaches taken towards alloys as a class of materials in different fields, ranging from geology to metallurgical engineering. The emphasis of this book is to highlight commonalities between different fields with respect to how alloys are studied. The topics in this book fall into several themes, which suggest a number of different classification schemes. We have chosen a scheme that classifies the papers in the volume into the categories Microstructural Considerations, Ordering, Kinetics and Diffusion, Magnetic Considerations and Elastic Considerations. The book has juxtaposed apparently disparate approaches to similar physical processes, in the hope of revealing a more dynamic character of the processes under consideration. This monograph will invigorate new kinds of discussion and reveal challenges and new avenues to the description and prediction of properties of materials in the solid state and the conditions that produce them
Applied Electromagnetism and Materials
Topics range from the spectroscopy and characterization of dielectrics and semiconductors, to non-linear effects and electromagnetic cavities, to ion-beam applications in materials science.
Advances in solid state physics ; Vol. 45
The book presents, to some extent, the status of the field of solid-state physics in 2005 not only in Germany but also internationally. It is ''nanoscience'', namely the physics of quantum dots and wires, electrical transport, optical properties, spin transport in nanostructures, and magnetism on the nanoscale, that is of central interest to the physics community. Also, soft matter and biological systems are covered.
Advanced Gate Stacks for High-Mobility Semiconductors
Provides a comprehensive monograph on gate stacks in semiconductor technology. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
