الصفحة 1
الصفحة 1
Group 13 Chemistry III : Industrial Applications
The present issue of Structure and Bonding is dedicated to applied group 13 chemistry, particularly for the elements boron and aluminum, and to a lesser degree gallium and indium. Although boron is a trace element (0.01 g kg 1) in the earth's crust, it has been concentrated in a few locations by geochemical processes and is relatively easy to mine as borax. Aluminum, on the other hand, is the most abundant metal in the earth's crust (82 g kg 1) and dispersed widely throughout the globe. In the chapter Schubert explains the close relationship between the basic properties of the boron compounds and their associated uses. The remaining four chapters focus, to some degree, on aluminum. Since a great deal of literature exists in this area, these chapters are more focused on areas of emerging utility, and contain a great deal of fundamental information. Uhl's contribution in Chapter 2 provides basic synthesis and structural information for aluminum and gallium hydrazides. These types of compounds are being explored as potential molecular precursors to metal nitrides such as the important blue green laser material gallium nitride.
Gallium Nitride Processing for Electronics, Sensors and Spintronics
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.
Gallium Nitride Electronics
Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material properties of III-N semiconductors and substrates; the state-of-the-art of devices and circuits, epitaxial growth, device technology, modelling and characterization; and circuit examples are discussed. The book concludes with device reliability aspects and an overview of integration and packaging. This comprehensive monograph and tutorial is based on more than a decade of research on materials, devices, and circuits.
