تحسين النتائح
ترتيب حسب
من
الى
الصفحة 1
الصفحة 1
Materials for Information Technology : Devices, Interconnects and Packaging
The Engineering Materials and Processes series focuses on all forms of materials and the processes used to synthesise and formulate them as they relate to the various engineering disciplines.
Materials Fundamentals of Gate Dielectrics
This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy.
Low-Frequency Noise in Advanced MOS Devices
Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits.
Applied Electromagnetism and Materials
Topics range from the spectroscopy and characterization of dielectrics and semiconductors, to non-linear effects and electromagnetic cavities, to ion-beam applications in materials science.
An Introduction to the Mathematical Theory of Dynamic Materials
This book gives a mathematical treatment of a novel concept in material science that characterizes the properties of dynamic materials—that is, material substances whose properties are variable in space and time. Unlike conventional composites that are often found in nature, dynamic materials are mostly the products of modern technology developed to maintain the most effective control over dynamic processes. These materials have diverse applications: tunable left-handed dielectrics, optical pumping with high-energy pulse compression, and electromagnetic stealth technology, to name a few. Of special significance is the participation of dynamic materials in almost every optimal material design in dynamics.
Advanced Gate Stacks for High-Mobility Semiconductors
Provides a comprehensive monograph on gate stacks in semiconductor technology. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
