Defects in High-k Gate Dielectric Stacks : Nano-Electronic Semiconductor Devices

Defects in High-k Gate Dielectric Stacks : Nano-Electronic Semiconductor Devices

المؤلف
Evgeni Gusev
سنة النشر
الناشر
اللغة
نوع الوثيقة
الموضوع الرئيسي
رمز الوثيقة

One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.



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