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Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications
Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding.
Distributed applications and interoperable systems ; Vol. 3543 ; 5th IFIP WG 6.1 International conference, DAIS 2005, Athens, Greece, June 15-17, 2005, Proceedings
ThisvolumecontainstheproceedingsoftheIFIPWG6. 1InternationalWorking Conference on Distributed Applications and Interoperable Systems V held in Athens, Greece, on June 15–17, 2005. The conference program presented the state of the art in research concerning distributed and interoperable systems. The emergence of 4th-generation c- munication systems, the evolution of Internet technologies, the convergence of telecom and datacom, wireless and ?xed communication systems and appli- tions pave the path for ubiquitous service and application provision. Innovative solutions are required for the development, implementation and operation of distributed applications in complex IT environments full of diversity and h- erogeneity. Today, the emerging wide spectrum of distributed systems.
