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Dilute III-V Nitride Semiconductors and Material Systems : Physics and Technology
A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor lattice leads to a dramatic reduction of the band gap. This discovery has opened the possibility of using these material systems for applications ranging from lasers to solar cells. Physics and Technology of Dilute III-V Nitride Semiconductors & Novel Dilute Nitride Material Systems reviews the current status of research and development in dilute III-V nitrides, with 24 chapters from prominent research groups covering recent progress in growth techniques, experimental characterization of band structure, defects carrier transport, transport properties, dynamic behavior of N atoms, device applications, modeling of device design, novel optoelectronic integrated circuits, and novel nitrogen containing III-V materials.
Control Design Techniques in Power Electronics Devices
The book is introduced through the very important topic of modeling switched power electronics as controlled dynamical systems. Detailed circuit layouts, schematics and actual closed-loop control responses from a representative group of the plants under discussion and generated by applying the theory are included. The control theories which feature in the book are: sliding mode control and feedback control by means of approximate linearization (linear state feedback, static and dynamic proportional-integral-differential (PID control), output feedback trough observer design, Lyapunov-based control and passivity-based control). Nonlinear control design methods represented include: exact feedback linearization, input-output linearization, differential flatness, generalized PID control and, again, passivity-based control.
