Matching Properties of Deep Sub-Micron MOS Transistors
Publication year: 2005
ISBN: 978-0-387-24313-9
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Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield.
Subject: Engineering, CMOS, MOSFET matching, MOSFET modeling, Transistor, device characterization, field-effect transistor, line-edge roughness, metal oxide semiconductur field-effect transistor, parameter fluctuations, zitter
