May 12,2018
Scientific research & Postgraduate Studies, ICT Engineering
Electrostatic Capacitances in Standard and Pseudomorphic Ultrashort Gate Length HEMTs
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Published in |
Electronics Letters, Volume 28, Issue: 19, 10 Sept. 1992 |
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Abstract |
HEMT electrostatic capacitances are determined with a 2D finite element solver according to the device geometry. The calculation is compared with measurements on recessed ultrasubmicrometre rectangular gate and T-gate pseudomorphic and standard HEMTs on GaAs. |
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Link to read full paper |
