الصفحة 1
الصفحة 1
Thermal and Power Management of Integrated Circuits
In Thermal and Power Management of Integrated Circuits, power and thermal management issues in integrated circuits during normal operating conditions and stress operating conditions are addressed. Thermal management in VLSI circuits is becoming an integral part of the design, test, and manufacturing.
Symbolic Analysis and Reduction of VLSI Circuits
Efficient modeling and reduction of both the passive and active circuits is essential for hierarchical and IP-based reuse design paradigms. Symbolic Analysis and Reducation of VLSI Circuits presents the symbolic approach to the modeling and reduction of both the passive parasitic linear networks and active analog circuits. It reviews classic symbolic analysis methods and presents state-of-art developments for interconnect reduction and the behavioral modeling of active analog circuits. The text includes the most updated discoveries such as Y-Delta transformation and DDD-graph symbolic representation which allow analysis and modeling of much larger circuitry than ever before.
Routing Congestion in VLSI Circuits : Estimation and Optimization
Routing Congestion in VLSI Circuits: Estimation and Optimization provides the reader with a complete understanding of the root causes of routing congestion in present-day and future VLSI circuits, available techniques for estimating and optimizing this congestion, and a critical analysis of the accuracy and effectiveness of these techniques, so that the reader may prudently choose an approach that is appropriate to their design goals. The scope of the work includes metrics and optimization techniques for routing congestion at various stages of the VLSI design flow, including the architectural level, the logic synthesis/technology mapping level, the placement phase, and the routing step. A particular focus of this work is on the congestion issues that deal primarily with standard cell based design.
Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits
Failures of nano-metric technologies owing to defects and shrinking process tolerances give rise to significant challenges for IC testing. As the variation of fundamental parameters such as channel length, threshold voltage, thin oxide thickness and interconnect dimensions goes well beyond acceptable limits, new test methodologies and a deeper insight into the physics of defect-fault mappings are needed. In Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits state of the art of defect-oriented testing is presented from both a theoretical approach as well as from a practical point of view. Step-by-step handling of defect modeling, defect-oriented testing, yield modeling and its usage in common economics practices enables deeper understanding of concepts.
