الصفحة 1
الصفحة 1
Mid-infrared Semiconductor Optoelectronics
Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area. It is composed of four parts. First, the basic physics and some of the main problems facing the design engineer (together with a comparison of possible solutions) are laid out. Next, there is a consideration of the multifarious lasers used as sources for mid-infrared technology, including an inspection of current approaches to the lack of such a source in the 3–4 µm region. Part III reviews recent work in light-emitting diodes and detectors and also deals with negative luminescence. The final part of the book is concerned with applications and highlights, once more, the diversity and technological importance of the mid-infrared spectral region.
High-Speed Photodiodes in Standard CMOS Technology
High-speed Photodiodes in Standard CMOS Technology describes high-speed photodiodes in standard CMOS technology which allow monolithic integration of optical receivers for short-haul communication. For short haul communication the cost aspect is important , and therefore it is desirable that the optical receiver can be integrated in the same CMOS technology as the rest of the system. If this is possible then ultimately a singe-chip system including optical inputs becomes feasible, eliminating EMC and crosstalk problems, while data rate can be extremely high.
Highly Sensitive Optical Receivers
Highly Sensitive Optical Receivers primarily treats the circuit design of optical receivers with external photodiodes. Continuous-mode and burst-mode receivers are compared. The monograph first summarizes the basics of III/V photodetectors, transistor and noise models, bit-error rate, sensitivity and analog circuit design, thus enabling readers to understand the circuits described in the main part of the book. In order to cover the topic comprehensively, detailed descriptions of receivers for optical data communication in general and, in particular, optical burst-mode receivers in deep-sub-µm CMOS are presented. Numerous detailed and elaborate illustrations facilitate better understanding.
CMOS Multi-Channel Single-Chip Receivers for Multi-Gigabit Optical Data Communications
Focuses on optical communications for short and very short distance applications and discusses the monolithic integration of optical receivers with processing elements in standard CMOS technologies. CMOS Multi-Channel Single-Chip Receivers for Multi-Gigabit Optical Data Communications provides the reader with the necessary background knowledge to fully understand the trade-offs in short-distance communication receiver design and presents the key issues to be addressed in the development of such receivers in CMOS technologies. Moreover, novel design approaches are presented. A system-level design methodology allows for the impact analysis of different block specifications and system-wide design optimization. Statistical models are used for design space exploration in the scope of jitter tolerance analysis of clock recovery circuits.
CCD Image Sensors in Deep-Ultraviolet : Degradation Behavior and Damage Mechanisms
As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.
Broadband Opto-Electrical Receivers in Standard CMOS
Broadband Opto-Electrical Receivers in Standard CMOS starts from the basic fundamentals, necessary for the design of opto-electronic interface circuits. The book continues with an in-depth analysis of the photodiode, transimpedance amplifier (TIA) and limiting amplifier (LA). To thoroughly understand the light detection mechanisms in silicon, first a one-dimensional and second a two-dimensional model is developed. Analytical design equations are derived to guide the design of the amplifying circuits. For the TIA, the focus lies on the sensitivity-speed trade-off. For the LA, a high gain-bandwidth is pursued. Several practical design examples reveal the subtleties and challenges encountered during the design of high-performance analog circuits.
