Matching Properties of Deep Sub-Micron MOS Transistors
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield.
الكلمات المفتاحية: Engineering / CMOS / MOSFET matching / MOSFET modeling / Transistor / Device characterization / Field-effect transistor /line-edge roughness / Metal oxide semiconductur field-effect transistor / Parameter fluctuations / Zitter