Author

1. Jin-Delorme; A. De Lustrac; P. Crozat; K. Yazbek; R. Adde; G. Vernet; Y. Yin; B. Etienne; H. Launois

Published in

Electronics Letters, Volume 29, Issue 7, 1 April 1993

Abstract

The electric parameter evolutions of state of the art ultrashort gate planar doped AlGaAs/GaAs HEMTs are studied against gatelength l/sub g/=0.4-0.1 mu m and bias. The best value of maximum intrinsic transconductance obtained is g/sub m0max/=800 mS/mm at l/sub g/=0.15 mu m and the measured cutoff frequency is f/sub t/=125 GHz at l/sub g/=0.1 mu m.

Link to read full paper

http://ieeexplore.ieee.org/abstract/document/211828/