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الصفحة 1
الصفحة 1
Matching Properties of Deep Sub-Micron MOS Transistors
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield.
Low-Frequency Noise in Advanced MOS Devices
Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits.
Advanced Gate Stacks for High-Mobility Semiconductors
Provides a comprehensive monograph on gate stacks in semiconductor technology. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
