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الصفحة 1
الصفحة 1
LNA-ESD Co-Design for Fully Integrated CMOS Wireless Receivers
LNA-ESD Co-Design for Fully Integrated CMOS Wireless Receivers fits in the quest for complete CMOS integration of wireless receiver front-ends. With a combined discussion of both RF and ESD performance, it tackles one of the final obstacles on the road to CMOS integration.
CCD Image Sensors in Deep-Ultraviolet : Degradation Behavior and Damage Mechanisms
As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.
Broadband Opto-Electrical Receivers in Standard CMOS
Broadband Opto-Electrical Receivers in Standard CMOS starts from the basic fundamentals, necessary for the design of opto-electronic interface circuits. The book continues with an in-depth analysis of the photodiode, transimpedance amplifier (TIA) and limiting amplifier (LA). To thoroughly understand the light detection mechanisms in silicon, first a one-dimensional and second a two-dimensional model is developed. Analytical design equations are derived to guide the design of the amplifying circuits. For the TIA, the focus lies on the sensitivity-speed trade-off. For the LA, a high gain-bandwidth is pursued. Several practical design examples reveal the subtleties and challenges encountered during the design of high-performance analog circuits.
